"Colossal Magnetic Effect" Could Lead To Another Breakthrough In Storage Tech

Bryant writes “Scientists with the Carnegie Institution for Science have discovered what could bring yet another massive advance in memory and storage. The discovery, a magnetoresistence literally ‘up to 1000 times more powerful’ than the Giant Magnetoresistence Effect discovered roughly 20 years ago, which led to one of the major breakthroughs in memory, seems to be a result of high-pressure interactions between Manganites. Manganites aren’t new to this game; MRAM uses Manganite layers to achieve the Magnetic Tunnel Effect needed to keep the state of memory stable. Applying significant amounts of pressure to known tech-useful materials isn’t a new trick; you might recall the recent breakthrough with Europium superconductivity thanks to similar high-pressure antics.”

Read more of this story at Slashdot.


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Friday, June 5th, 2009 Uncategorized